快闪存储器中高压电路的TID退化研究

2013 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2013-10-01 DOI:10.1109/IIRW.2013.6804186

Fengying Qiao, L. Pan, Xuemei Liu, Haozhi Ma, Dong Wu, Jun Xu

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引用次数: 1

摘要

研究了含高压(HV)外围的闪存电路的总电离剂量辐射响应。我们发现电荷泵(CP)的功能失效主要是由于高压通路晶体管中的辐射感应泄漏电流导致负载电流增加而引起的。这导致无法依次对数组进行编程/擦除。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation of TID degradation of high voltage circuits in flash memory

The total ionizing dose (TID) radiation response of a flash memory circuit including high voltage (HV) periphery was studied. We show that functional failure of the charge pumps (CP) is mostly caused by an increased load current, due to radiation induced leakage current in the HV pass transistors. This leads to a failure to program/erase the array in turn.

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2013 IEEE International Integrated Reliability Workshop Final Report

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