{"title":"高压容性电压转换","authors":"Randall L. Sandusky, A. Hölke","doi":"10.1109/ISPSD.2018.8393715","DOIUrl":null,"url":null,"abstract":"A novel high-voltage, ultra-high efficiency monolithic DC-DC Converter is presented. The disclosed architecture was integrated in the X-Fab XT018 SOI process using lateral Super Junction NMOS devices for up to 400V operation. Buck or boost voltage conversion is realized using high-voltage switched-capacitor and gate-driver techniques enabling efficiencies of > 98% peak efficiency, > 97% from 5% to 100% load. The topology is suitable for many applications including charging systems for cell-phones, tablets or other handheld devices, USB power conversion, AC-DC Adapters, DC-DC Point-of-Load (POL) and IoT applications. Block diagrams, simulated and measured results are presented showing the key features of this architecture, areas of interest and the performance summary.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"256 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High voltage capacitive voltage conversion\",\"authors\":\"Randall L. Sandusky, A. Hölke\",\"doi\":\"10.1109/ISPSD.2018.8393715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel high-voltage, ultra-high efficiency monolithic DC-DC Converter is presented. The disclosed architecture was integrated in the X-Fab XT018 SOI process using lateral Super Junction NMOS devices for up to 400V operation. Buck or boost voltage conversion is realized using high-voltage switched-capacitor and gate-driver techniques enabling efficiencies of > 98% peak efficiency, > 97% from 5% to 100% load. The topology is suitable for many applications including charging systems for cell-phones, tablets or other handheld devices, USB power conversion, AC-DC Adapters, DC-DC Point-of-Load (POL) and IoT applications. Block diagrams, simulated and measured results are presented showing the key features of this architecture, areas of interest and the performance summary.\",\"PeriodicalId\":166809,\"journal\":{\"name\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"volume\":\"256 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2018.8393715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel high-voltage, ultra-high efficiency monolithic DC-DC Converter is presented. The disclosed architecture was integrated in the X-Fab XT018 SOI process using lateral Super Junction NMOS devices for up to 400V operation. Buck or boost voltage conversion is realized using high-voltage switched-capacitor and gate-driver techniques enabling efficiencies of > 98% peak efficiency, > 97% from 5% to 100% load. The topology is suitable for many applications including charging systems for cell-phones, tablets or other handheld devices, USB power conversion, AC-DC Adapters, DC-DC Point-of-Load (POL) and IoT applications. Block diagrams, simulated and measured results are presented showing the key features of this architecture, areas of interest and the performance summary.
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