在块状硅晶片上实现的三栅极/spl ω / mosfet射频小信号建模

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398220

Nam-Kyun Tak, Jong-Ho Lee

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引用次数: 6

摘要

首先利用三维器件模拟器研究了三栅极/spl ω / mosfet的射频特性。利用等效电路提取小信号模型参数，并与平面MOSFET进行比较。与平面器件相比，/spl ω / MOSFET的g/sub mb/和V/sub T/具有衬底偏置的灵敏度较低。三gale /spl Omega/ mosfet在较低漏极电流下具有较高的截止频率。

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RF small signal modeling of tri-gate /spl Omega/ MOSFETs implemented on bulk Si wafers

The RF characteristics of the tri-gate /spl Omega/ MOSFETs were studied firstly by using 3-dimensional device simulator. Small signal model parameters were extracted using an equivalent circuit and compared with those of a planar MOSFET. The /spl Omega/ MOSFET shows lower sensitivity of g/sub mb/ and V/sub T/ with substrate bias than the planar device. The tri-gale /spl Omega/ MOSFETs shows a higher cut-off frequency at a lower drain current.

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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