{"title":"MOS器件中亚5nm栅极氧化物的击穿后导通","authors":"E. Miranda, J. Suñé","doi":"10.1109/ICCDCS.2000.869838","DOIUrl":null,"url":null,"abstract":"We investigate the electron transport through broken down ultrathin (<5 nm) SiO/sub 2/ films in metal-oxide-semiconductor structures. We present experimental and theoretical results which demonstrate that the conduction properties of such systems are essentially governed by the cross-sectional area of the constriction connecting gate and substrate. It is shown that the hard or catastrophic breakdown mode exhibits conductance plateaus of the order of the quantum unit G/sub 0/=2e/sup 2//h (/spl sime/12.9 k/spl Omega//sup -1/), as found in quantum point contacts. On the other hand, the soft breakdown mode depends exponentially on the applied bias and can be understood in terms of tunneling through the potential barrier associated with the lower electron transversal state at the narrowmost part of the constriction.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Post-breakdown conduction in sub-5 nm gate oxides in MOS devices\",\"authors\":\"E. Miranda, J. Suñé\",\"doi\":\"10.1109/ICCDCS.2000.869838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the electron transport through broken down ultrathin (<5 nm) SiO/sub 2/ films in metal-oxide-semiconductor structures. We present experimental and theoretical results which demonstrate that the conduction properties of such systems are essentially governed by the cross-sectional area of the constriction connecting gate and substrate. It is shown that the hard or catastrophic breakdown mode exhibits conductance plateaus of the order of the quantum unit G/sub 0/=2e/sup 2//h (/spl sime/12.9 k/spl Omega//sup -1/), as found in quantum point contacts. On the other hand, the soft breakdown mode depends exponentially on the applied bias and can be understood in terms of tunneling through the potential barrier associated with the lower electron transversal state at the narrowmost part of the constriction.\",\"PeriodicalId\":301003,\"journal\":{\"name\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2000.869838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2000.869838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Post-breakdown conduction in sub-5 nm gate oxides in MOS devices
We investigate the electron transport through broken down ultrathin (<5 nm) SiO/sub 2/ films in metal-oxide-semiconductor structures. We present experimental and theoretical results which demonstrate that the conduction properties of such systems are essentially governed by the cross-sectional area of the constriction connecting gate and substrate. It is shown that the hard or catastrophic breakdown mode exhibits conductance plateaus of the order of the quantum unit G/sub 0/=2e/sup 2//h (/spl sime/12.9 k/spl Omega//sup -1/), as found in quantum point contacts. On the other hand, the soft breakdown mode depends exponentially on the applied bias and can be understood in terms of tunneling through the potential barrier associated with the lower electron transversal state at the narrowmost part of the constriction.