基于CMOS技术的片上电感系统建模与参数提取

2013 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference (IMOC) Pub Date : 2013-10-28 DOI:10.1109/IMOC.2013.6646467

S. C. Sejas-García, R. Torres‐Torres, L. C. Moreira

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引用次数: 3

摘要

本文提出了一种系统的方法，用于表征和建模片上电感器在有损衬底上直接从s参数测量。模型实现既不需要精确的几何知识，也不需要制作过程。这简化了在类似spice的模拟器中电感器在高频下的表示。电路网络参数和q因子在12 GHz范围内实现了良好的模型-实验相关性。

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Systematic modeling and parameter extraction for on-chip inductors in CMOS technology

This paper presents a systematic methodology for characterizing and modeling on-chip inductors over a lossy substrate directly from S-parameter measurements. The model implementation neither requires precise knowledge of geometry or fabrication process. This eases the representation of inductors in SPICE-like simulators at high frequencies. Excellent model-experiment correlation is achieved up to 12 GHz for the circuit network parameters as well as for the Q-factor.

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来源期刊

2013 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference (IMOC)

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