片上老化传感器监测纳米SRAM中NBTI效应

A. Ceratti, T. Copetti, L. Bolzani, F. Vargas
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引用次数: 18

摘要

如今,存储越来越多信息的需求日益增长,导致静态随机存取存储器(sram)占据了片上系统(SoC)的最大部分。因此,SRAM的稳健性被认为是至关重要的,以保证这种soc的寿命可靠性。在这种情况下,降低纳米sram可靠性的最重要现象之一与负偏置温度不稳定性(NBTI)有关,NBTI加速了记忆细胞的老化。提出了一种基于片上老化传感器(OCAS)的SRAM寿命老化检测方法。OCAS能够检测SRAM阵列中细胞的任何特定老化状态。该策略基于每个SRAM列连接一个OCAS,每个OCAS通过监视SRAM单元上的写操作来定期执行脱机测试,以检测老化。为了防止OCAS老化和耗散泄漏功率,OCAS电路在其空闲期间断电。实验结果表明,该传感器具有较高的检测早期老化状态的灵敏度,从而保证了较高的存储可靠性。最后,与传感器插入相关的面积开销几乎可以忽略不计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On-chip aging sensor to monitor NBTI effect in nano-scale SRAM
Today, the increasing need to store more and more information has resulted in the fact that Static Random Access Memories (SRAMs) occupy the greatest part of a System-on-Chip (SoC). Therefore, SRAM's robustness is considered crucial in order to guarantee the reliability of such SoCs over lifetime. In this context, one of the most important phenomena that degrades Nano-scale SRAMs reliability is related to Negative-Bias Temperature Instability (NBTI), which accelerates memory cells aging. This paper proposes a new approach to detect SRAM aging during system lifetime based on an On-Chip Aging Sensor (OCAS). The OCAS is able to detect any specific aging state of a cell in the SRAM array. The strategy is based on the connection of one OCAS every SRAM column, each periodically performing off-line tests by monitoring the write operations on the SRAM cells in order to detect aging. To prevent the OCAS from aging and from dissipating leakage power, the OCAS circuitry is powered-off during its idle periods. Experimental results demonstrate the sensor's high sensitivity to detect early aging states and therefore, guaranteeing high memory reliability. Finally, the area overhead related to the sensors' insertion is almost negligible.
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