1.2 kV SiC MOSFET体二极管在快速开关中的关断:通道传导、载流子等离子体和寄生导通

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147712

T. Pham, J. Franchi, K. Lee, M. Domeij

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引用次数: 0

摘要

本文扩展了1.2 kV SiC mosfet体二极管(BD)关断过程的研究[1]。在这里，我们研究了高电流密度(J=675 A/cm2)、快速开关(开通di/dt高达6 A/ns)和高温条件(T=175℃)下的器件。详细分析了体二极管(BD)通道导通、导通状态载流子等离子体和寄生导通(PTO)的不同方面。

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1.2 kV SiC MOSFET Body Diode Turn-Off in Fast Switching: Channel Conduction, Carrier Plasma and Parasitic Turn-On

The paper extends the investigation of the body diode (BD) turn-off process for 1.2 kV SiC MOSFETs [1]. Here, we investigate the devices under high current density (J=675 A/cm2), fast switching (turn-on di/dt up to 6 A/ns) and high temperature conditions (T=175°C). The different aspects of body diode (BD) channel conduction, on-state carrier plasma and parasitic turn-on (PTO) are analysed in detail.

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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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