基于数据模式表征的STT-MRAM缓存写能量优化

Bi Wu, Xiaolong Zhang, Yuanqing Cheng, Zhaohao Wang, Dijun Liu, Youguang Zhang, Weisheng Zhao
{"title":"基于数据模式表征的STT-MRAM缓存写能量优化","authors":"Bi Wu, Xiaolong Zhang, Yuanqing Cheng, Zhaohao Wang, Dijun Liu, Youguang Zhang, Weisheng Zhao","doi":"10.1109/ISVLSI.2018.00068","DOIUrl":null,"url":null,"abstract":"Traditional memory technologies face severe challenges meeting the ever increasing power and memory bandwidth requirements for high performance computing and big-data analysis. Several emerging memory technologies, as promising candidates to replace SRAM or DRAM, have advanced fast. Among them, STT-MRAM can be used to replace SRAM for on chip cache. However, it suffers from high write energy and latency problems. In the paper, we investigate the data patterns written back from SRAM based L1 cache to STT-MRAM based L2 cache to explore the write energy reduction potential. Depending on the data layout within a cache line, redundant bits can be identified and eliminated from write back operations to save STT-MRAM write energy with only a small area overhead. The simulation results validate the effectiveness and efficiency of our proposed method.","PeriodicalId":114330,"journal":{"name":"2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Write Energy Optimization for STT-MRAM Cache with Data Pattern Characterization\",\"authors\":\"Bi Wu, Xiaolong Zhang, Yuanqing Cheng, Zhaohao Wang, Dijun Liu, Youguang Zhang, Weisheng Zhao\",\"doi\":\"10.1109/ISVLSI.2018.00068\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Traditional memory technologies face severe challenges meeting the ever increasing power and memory bandwidth requirements for high performance computing and big-data analysis. Several emerging memory technologies, as promising candidates to replace SRAM or DRAM, have advanced fast. Among them, STT-MRAM can be used to replace SRAM for on chip cache. However, it suffers from high write energy and latency problems. In the paper, we investigate the data patterns written back from SRAM based L1 cache to STT-MRAM based L2 cache to explore the write energy reduction potential. Depending on the data layout within a cache line, redundant bits can be identified and eliminated from write back operations to save STT-MRAM write energy with only a small area overhead. The simulation results validate the effectiveness and efficiency of our proposed method.\",\"PeriodicalId\":114330,\"journal\":{\"name\":\"2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)\",\"volume\":\"106 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISVLSI.2018.00068\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2018.00068","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

随着高性能计算和大数据分析对功耗和带宽的要求不断提高,传统存储技术面临严峻挑战。一些新兴的存储技术,作为有希望取代SRAM或DRAM的候选人,已经迅速发展。其中,STT-MRAM可以代替SRAM进行片上缓存。但是,它存在高写入能量和延迟问题。在本文中,我们研究了从基于SRAM的L1缓存回写到基于STT-MRAM的L2缓存的数据模式,以探索写能量降低的潜力。根据高速缓存线路内的数据布局,可以从回写操作中识别和消除冗余位,从而节省STT-MRAM写入能量,并且只需要很小的面积开销。仿真结果验证了该方法的有效性和高效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Write Energy Optimization for STT-MRAM Cache with Data Pattern Characterization
Traditional memory technologies face severe challenges meeting the ever increasing power and memory bandwidth requirements for high performance computing and big-data analysis. Several emerging memory technologies, as promising candidates to replace SRAM or DRAM, have advanced fast. Among them, STT-MRAM can be used to replace SRAM for on chip cache. However, it suffers from high write energy and latency problems. In the paper, we investigate the data patterns written back from SRAM based L1 cache to STT-MRAM based L2 cache to explore the write energy reduction potential. Depending on the data layout within a cache line, redundant bits can be identified and eliminated from write back operations to save STT-MRAM write energy with only a small area overhead. The simulation results validate the effectiveness and efficiency of our proposed method.
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