Ultrascaled Multidomain P(VDF-TrFE) Organic Ferroelectric Gate Stack to the Rescue

The idea of harnessing the negative capacitance signature (NCS) effect in a ferroelectric (FE) material is a recent entry in the world of nanoelectronics. There is an urgent need to harness this effect at a minimum supply voltage (VA). Therefore, in this paper, we have investigated the transient NCS response in a series resistor (R)-organic FE (OFE) (RCOFE) circuit at ±0.4 V employing a well-calibrated multidomain Ginzburg-Landau-Khalatnikov model in Sentaurus technology computer-aided design (STCAD) environment. A remarkable average coercive voltage reduction of about 69 to 90.16 % is achieved concerning different literature reports. The proposed OFE gate stack (OFEGS) can capture the NCS effect even at ±0.4 V, while its counterpart FE hafnium dioxide (HfO2) based gate stack fails to harness the NCS and behaves like a positive linear capacitor. The various influence of the Landau parameters, R, and switching resistivity (ρOFE) on the transient NCS behavior are significantly investigated. We found that the NCS response time (δt) and the NCS voltage window (δVNCS) accentuate as R increases. The δt in the proposed OFEGS is much faster (99.77 to ~99.88 %) than its state-of-the-art counterparts. Finally, our OFEGS can capture the maximum δVNCS by coming close to the ideal Landau path with a negligible deviation of about ±0.009 V at zero FE polarization. Therefore, the proposed device capturing NCS with a small VA of ±0.4 V, total switched charge density of 2.54 µC/cm2, and lower energy dissipation of 0.95 fJ could act as a rescuer for many standard transistors from the Boltzmann’s Tyranny.