一种宽带全集成0.25/spl μ m BiCMOS 5GHz中功率放大器

M. Vaiana, G. Gramegna, M. Paparo
{"title":"一种宽带全集成0.25/spl μ m BiCMOS 5GHz中功率放大器","authors":"M. Vaiana, G. Gramegna, M. Paparo","doi":"10.1109/BIPOL.2004.1365808","DOIUrl":null,"url":null,"abstract":"A wideband 4.2GHz-5.6GHz balanced Medium Power Amplifier has been designed in a 0.2Spm SiGe:C bipolar process. The two stage amplifier is housed in a VFQF’F”20 package with integrated inputloutput matcbing networks and onboard printed rat-race balnns. A saturated output power of 16dBm has been measured with a small signal gain of IS.2dB at SGHz with a total current consumption of llOmA from a 2.4V supply voltage at ambient temperature. The measured 3dB bandwidth is IIGHz, the best value ever reported in literature for a fully integrated medium PA housed in a standard padage for mass production witb DO external components required for inputloutput matching. The die size is 1.4~1.750 m d .","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A wideband fully integrated 0.25/spl mu/m BiCMOS 5GHz medium power amplifier\",\"authors\":\"M. Vaiana, G. Gramegna, M. Paparo\",\"doi\":\"10.1109/BIPOL.2004.1365808\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband 4.2GHz-5.6GHz balanced Medium Power Amplifier has been designed in a 0.2Spm SiGe:C bipolar process. The two stage amplifier is housed in a VFQF’F”20 package with integrated inputloutput matcbing networks and onboard printed rat-race balnns. A saturated output power of 16dBm has been measured with a small signal gain of IS.2dB at SGHz with a total current consumption of llOmA from a 2.4V supply voltage at ambient temperature. The measured 3dB bandwidth is IIGHz, the best value ever reported in literature for a fully integrated medium PA housed in a standard padage for mass production witb DO external components required for inputloutput matching. The die size is 1.4~1.750 m d .\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365808\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

采用0.2Spm SiGe:C双极工艺设计了一种宽带4.2GHz-5.6GHz平衡中功率放大器。两级放大器被安置在一个VFQF 'F " 20封装集成输入输出匹配网络和板载印刷老鼠赛跑谷仓。在环境温度下,在2.4V电源电压下,测量到的饱和输出功率为16dBm,信号增益为IS.2dB,总电流消耗为loma。测量的3dB带宽为IIGHz,这是文献中报道的完全集成的介质放大器的最佳值,该介质放大器安装在标准页中,用于批量生产,输入输出匹配所需的DO外部组件。模具尺寸为1.4~1.750 m d。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A wideband fully integrated 0.25/spl mu/m BiCMOS 5GHz medium power amplifier
A wideband 4.2GHz-5.6GHz balanced Medium Power Amplifier has been designed in a 0.2Spm SiGe:C bipolar process. The two stage amplifier is housed in a VFQF’F”20 package with integrated inputloutput matcbing networks and onboard printed rat-race balnns. A saturated output power of 16dBm has been measured with a small signal gain of IS.2dB at SGHz with a total current consumption of llOmA from a 2.4V supply voltage at ambient temperature. The measured 3dB bandwidth is IIGHz, the best value ever reported in literature for a fully integrated medium PA housed in a standard padage for mass production witb DO external components required for inputloutput matching. The die size is 1.4~1.750 m d .
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