光敏可显影底防反射涂料(DBARC)研究进展

Lithography Asia Pub Date : 2009-12-03 DOI:10.1117/12.837050
T. Kudo, S. Chakrapani, A. Dioses, Edward Ng, C. Antonio, Deepa S. Parthasarathy, S. Miyazaki, Yuki Ubayashi, Kazuma Yamamoto, Y. Akiyama, Richard A. Collett, M. Neisser, M. Padmanaban
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引用次数: 1

摘要

可展底增透涂料(DBARC)是新兴的光刻材料技术。DBARC的最大优点是它消除了等离子体蚀刻步骤,避免了在植入过程中对等离子体敏感层的破坏。阿斯利康率先开发了基于光敏裂解以及交联/去交联机制的可开发BARC。在本文中,我们重点讨论交联/去交联的概念。从工艺和配方两方面对DBARC/抗蚀剂错配进行了纠正。优化后的DBARC光刻性能与常规barc相当。本文介绍了光敏可显影DBARC的化学概念、DBARC/抗蚀剂的匹配方法以及光敏DBARC在248 nm和193 nm曝光下的性能。本文还介绍了193 nm浸没曝光的最新结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Latest developments in photosensitive developable bottom anti-reflective coating (DBARC)
Developable bottom anti-reflective coatings (DBARC) are an emerging litho material technology. The biggest advantage of DBARC is that it eliminates the plasma etch step, avoiding damage to plasma sensitive layers during implantation. AZ has pioneered developable BARC based on photosensitive cleave as well as crosslink/decrosslink mechanisms. In this paper, we focus on the crosslink/decrosslink concept. DBARC/resist mismatching was corrected both from process and formulation sides. The optimized DBARC showed comparable lithographic performance as conventional BARCs. This paper provides the chemical concept of the photosensitive developable DBARCs, approaches for DBARC/resist matching and performance of photosensitive DBARCs for 248 nm and 193 nm exposures. Recent 193 nm immersion exposure results are also presented.
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