{"title":"MOS器件静电放电敏感性测试程序","authors":"A. Goel","doi":"10.1109/IRPS.1981.362996","DOIUrl":null,"url":null,"abstract":"This paper describes a simple method for determining the susceptibility levels of packaged devices to electrostatic discharge (ESD) potential. Examples of protection network configurations are presented, along with failure threshold levels and the damage mechanisms.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"188 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Procedure for Testing Electrostatic Discharge Susceptibility of MOS Devices\",\"authors\":\"A. Goel\",\"doi\":\"10.1109/IRPS.1981.362996\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a simple method for determining the susceptibility levels of packaged devices to electrostatic discharge (ESD) potential. Examples of protection network configurations are presented, along with failure threshold levels and the damage mechanisms.\",\"PeriodicalId\":376954,\"journal\":{\"name\":\"19th International Reliability Physics Symposium\",\"volume\":\"188 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1981.362996\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.362996","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Procedure for Testing Electrostatic Discharge Susceptibility of MOS Devices
This paper describes a simple method for determining the susceptibility levels of packaged devices to electrostatic discharge (ESD) potential. Examples of protection network configurations are presented, along with failure threshold levels and the damage mechanisms.