具有竞争力的28纳米FDSOI技术1T-DRAM，用于低功耗嵌入式存储器

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2016-10-01 DOI:10.1109/S3S.2016.7804402

H. El Dirani, M. Bawedin, K. Lee, M. Parihar, X. Mescot, P. Fonteneau, P. Galy, F. Gámiz, Y.-T. Kim, P. Ferrari, S. Cristoloveanu

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引用次数: 9

摘要

我们实验展示了用28纳米FDSOI制造的无电容IT-DRAM。Z2-FET存储单元在温度为25°C和85°C时具有较大的电流感知裕度和较长的保持时间。系统测量表明，Z2-FET在低漏极/栅极偏置下具有可忽略不计的关断状态电流，适合作为低功耗嵌入式存储器。

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Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory

We demonstrate experimentally a capacitorless IT-DRAM fabricated with 28 nm FDSOI. The Z2-FET memory cell features a large current sense margin and long retention time at T = 25°C and 85°C. Systematic measurements show that Z2-FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory.

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2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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