隧道氧化物缺陷闪存测试

21st International Conference on VLSI Design (VLSID 2008) Pub Date : 2008-01-04 DOI:10.1109/VLSI.2008.41

M. G. Mohammad, K. Saluja

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引用次数: 5

摘要

隧道氧化缺陷的非易失性存储器测试是保证电池可靠性的重要方面之一。磁芯存储单元的隧道氧化层缺陷会导致各种干扰故障。本文研究了IT闪存电池绝缘层中的各种缺陷，并分析了它们对电池性能的影响。此外，我们提出了一种测试方法和测试算法，能够以有效的方式检测隧道氧化物缺陷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Testing Flash Memories for Tunnel Oxide Defects

Testing non volatile memories for tunnel oxide defects is one of the most important aspects to guarantee cell reliability. Defective tunnel oxide layer in core memory cells can result in various disturb faults. In this paper, we study various defects in the insulating layers of a IT flash cell and analyze their impact on cell performance. Further, we present a test methodology and test algorithms that enable the detection of tunnel oxide defects in an efficient manner.

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21st International Conference on VLSI Design (VLSID 2008)

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