{"title":"使用Tanner工具实现的VLSI三元门","authors":"A. Dhande, S. Narkhede, Shridhar Dudam","doi":"10.1109/ICDCSYST.2014.6926187","DOIUrl":null,"url":null,"abstract":"A new era of digital computation investigates the advantages of non-binary machine logic over the conventional binary logic. Multi Valued Logic [MVL] systems, where the radix is greater than 2 are evolving as a thrust area of research. Ternary logic has gained wide popularity and offers several potential opportunities for the improvement of present VLSI circuit designs. Ternary gates form the fundamental element for numerous ternary circuits, making its efficient design and simulation indispensable. This paper presents the implementation and simulation of ternary gates (TNOT, TNAND, TNOR) using injected voltage method. The binary CMOS logic is exploited to achieve the ternary logic values. The performance analysis of the ternary gates in terms of rise time, fall time and power dissipation is examined using Tanner Tool, version 13.02. The prominent subsets (S-Edit, L-Edit, T-Spice and W-Edit) of the tanner tool are used to derive the various device parameters and further verify the functionality of the gates. The layouts of the designed gates are also presented.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"28 8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"VLSI implementation of ternary gates using Tanner Tool\",\"authors\":\"A. Dhande, S. Narkhede, Shridhar Dudam\",\"doi\":\"10.1109/ICDCSYST.2014.6926187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new era of digital computation investigates the advantages of non-binary machine logic over the conventional binary logic. Multi Valued Logic [MVL] systems, where the radix is greater than 2 are evolving as a thrust area of research. Ternary logic has gained wide popularity and offers several potential opportunities for the improvement of present VLSI circuit designs. Ternary gates form the fundamental element for numerous ternary circuits, making its efficient design and simulation indispensable. This paper presents the implementation and simulation of ternary gates (TNOT, TNAND, TNOR) using injected voltage method. The binary CMOS logic is exploited to achieve the ternary logic values. The performance analysis of the ternary gates in terms of rise time, fall time and power dissipation is examined using Tanner Tool, version 13.02. The prominent subsets (S-Edit, L-Edit, T-Spice and W-Edit) of the tanner tool are used to derive the various device parameters and further verify the functionality of the gates. The layouts of the designed gates are also presented.\",\"PeriodicalId\":252016,\"journal\":{\"name\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"volume\":\"28 8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCSYST.2014.6926187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2014.6926187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
摘要
数字计算的新时代探讨了非二进制机器逻辑相对于传统二进制逻辑的优势。基数大于2的多值逻辑(MVL)系统正成为研究的热点。三元逻辑已经获得了广泛的普及,并提供了几个潜在的机会,以改善目前的VLSI电路设计。三元门是许多三元电路的基本元件,其高效的设计和仿真是必不可少的。本文介绍了用注入电压法实现三极栅极(TNOT、TNAND、TNOR)并进行仿真。利用二进制CMOS逻辑来实现三元逻辑值。使用Tanner Tool, version 13.02对三元门的上升时间、下降时间和功耗进行性能分析。tanner工具的突出子集(S-Edit, L-Edit, T-Spice和W-Edit)用于推导各种器件参数并进一步验证门的功能。并给出了所设计的门的布局。
VLSI implementation of ternary gates using Tanner Tool
A new era of digital computation investigates the advantages of non-binary machine logic over the conventional binary logic. Multi Valued Logic [MVL] systems, where the radix is greater than 2 are evolving as a thrust area of research. Ternary logic has gained wide popularity and offers several potential opportunities for the improvement of present VLSI circuit designs. Ternary gates form the fundamental element for numerous ternary circuits, making its efficient design and simulation indispensable. This paper presents the implementation and simulation of ternary gates (TNOT, TNAND, TNOR) using injected voltage method. The binary CMOS logic is exploited to achieve the ternary logic values. The performance analysis of the ternary gates in terms of rise time, fall time and power dissipation is examined using Tanner Tool, version 13.02. The prominent subsets (S-Edit, L-Edit, T-Spice and W-Edit) of the tanner tool are used to derive the various device parameters and further verify the functionality of the gates. The layouts of the designed gates are also presented.