MCT和IGBT结构的二维掺杂谱表征

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583749

G. Dallmann, T. Feudel, H. Syhre, H. Lendenmann, Wolfgang Fichtner

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引用次数: 2

摘要

不同的测量和成像技术(SIMS，扩频电阻，电子束感应电流，掺杂蚀刻和SEM检测)结合二维过程模拟，获得了MCT和IGBT结构中垂直和横向掺杂分布的完整信息。我们利用杂质深度剖面来验证模拟工具。过程模拟的信息对二维成像技术结果的解释很有帮助。

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Two-dimensional dopant profile characterization for MCT and IGBT structures

Different measurement and imaging techniques (SIMS, spreading resistance, electron beam induced current, dopant etching and SEM inspection) have been used together with 2D process simulation to acquire complete information about vertical and lateral dopant distribution in MCT and IGBT structures. We utilized impurity depth profiles to verify the simulation tools. The information of the process simulation than was very helpful to interpret the results of the 2D imaging techniques.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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