A. Mirza, Xiaoqiang Xu, A. Emon, F. Luo, Shikui Chen
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引用次数: 1
摘要
提出了一种基于sic的三维集成75 kVA智能电源级(IPS)的三面利用散热器设计方案。该结构能够最大限度地利用散热器,其中散热器的所有三个面都用于容纳功率器件。针对功率器件的损耗估算,提出了一种基于模型优化(Model Based Optimization, MBO)的效率计算算法,用于估算需由散热器有效散热的75 kVA时的IPS功耗。进一步简化和成本效益的散热器制造,圆柱孔被认为取代传统的翅片。利用SOLIDWORKS进行了参数分析,以确定有效散热和气流的最佳孔数。仿真结果表明,基于圆柱孔的散热片可以有效地将MOSFET芯片温度保持在120°C以下,与传统的单面散热设计相比,散热片体积减少35%。
A Three-Face Utilized Heat Sink Design for 3-D Integrated 75 kVA Intelligent Power Stage (IPS)
This paper proposes a three-face utilized heat sink design for a 3-D integrated SiC-based 75 kVA Intelligent Power Stage (IPS). The structure enables maximum utilization of the heat sink where all three faces of the heat sink are utilized to hold the power devices. For loss estimation from power devices, Model Based Optimization (MBO), an efficiency calculation algorithm, is developed to estimate power loss at 75 kVA for the IPS, which needs to be dissipated efficiently by the heat sink. Further for simplified and cost-effective heat sink fabrication, cylindrical holes are considered to replace conventional fins. A parametric analysis is performed using SOLIDWORKS to determine optimum number of holes for efficient heat spreading and airflow. The simulation results show that heat sink based on cylindrical holes is effective in keeping the MOSFET die temperature under 120 °C in continuous operation, with 35% reduction heat sink volume compared with the conventional single-sided cooled design.