尖峰退火对先进CMOS技术的适用性研究

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194797

D. Lenoble, E. Josse, A. Grouillet, F. Arnaud, C. Julien, T. Skotnicki, M. Haond

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引用次数: 1

摘要

在掺杂活化阶段，采用尖峰退火是缩短扩散长度的有效方法。我们随后证明了尖峰退火降低了短通道效应。我们指出，MOSFET的整体架构需要优化，以充分利用尖峰退火而不降低多栅极耗尽和氧化物可靠性。

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Investigation of the suitability of spike anneal for advanced CMOS technology

The use of the spike anneal is an efficient process to reduce the diffusion length during the dopant activation step. We demonstrate subsequently that the spike anneal reduces the Short Channel Effects. We point out the fact that the global architecture of MOSFET needs to be optimized to take full advantage of the spike anneal without degrading poly-gate depletion and oxide reliability.

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30th European Solid-State Device Research Conference

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