基于电阻率随温度变化的加纳变质岩电性实验研究

Ashitei Theophilus Amartey, J. K. Arthur
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引用次数: 0

摘要

对加纳典型岩石(如角闪石石榴片麻岩)的电阻率随温度变化的测量通常表明,从300 K到430 K左右,电阻率随温度线性增加,峰值为几MΩm,之后随温度呈指数下降。在300 ~ 500 K的温度范围内,测量了4个角闪石榴石片麻岩样品的电阻率随温度的变化规律,以阐明岩石中携带电流的性质。第一个样本没有进行任何处理。第二个样品被烘烤到1000 K 30分钟,以排出所有孔隙流体,并在干燥环境中冷却到300 K。第三个样品用硅胶干燥14天。最后,第四份样品在CaSO4(硫酸钙)溶液中浸泡21天。在电阻率测量中观察到每种情况下的温度滞后。除样品在一定温度下的电阻率表现为半导体-半金属转变外。所有样品的电阻率均随温度升高而升高,达到一定峰值后,电阻率随温度呈指数下降。所有样品的能隙在1.20 ~ 1.1eV之间。电阻测量的精度为+ 0。1%。烘烤样品中的半导体-半金属转变在空气中吸收水分时消失。所得结果完全满足实验目的。观察到的半导体-半金属转变可以用于其他研究领域的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental Study of the Electrical Properties of A Ghanaian Metamorphic Rock Using Resistivity Variation with Temperature
Measurement of resistivity of typical Ghanaian rocks like hornblende garnet gneiss with temperature variations usually reveal that from 300 K to around 430 K, resistivity increases linearly with temperature to a peak of a few MΩm, after which it drops exponentially with temperature. The temperature dependence of resistivity for four samples of hornblende garnet gneiss has been measured, in the temperature range from 300 K to about 500 K for both increasing and decreasing temperatures, to elucidate the nature of electric current been carried in the rocks. The first sample was not given any treatment. The second sample was baked to 1000 K for 30 minutes to drive out all pore fluids and allowed to cool to 300 K in a dry environment. The third sample was dried for 14 days with silica gel. Lastly, the fourth sample was soaked in CaSO4(Calcium Sulphate) solution for 21 days. Temperature hysteresis in each case was observed in the resistivity measurements. Except the sample, which showed semiconductor - semi-metallic transition in resistivity at certain temperatures. All the samples showed increasing resistivity with increasing temperature to certain peaks, beyond which the resistivity decreased exponentially with temperature. The energy gaps for all samples ranged between 1.20 eV and 1.1eV. The accuracy of the resistance measurements was + 0. 1%. The semiconductor - semi-metallic transition in the baked sample vanished when left in the air to absorb moisture. The results obtained fully satisfies the aim of the experiment. The semiconductor-semi-metallic transition observed can be investigated for application in other areas of study.
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