{"title":"门控侧双极晶体管集电极电流的解析模型","authors":"K. Joardar","doi":"10.1109/BIPOL.1992.274046","DOIUrl":null,"url":null,"abstract":"A physically based, analytical model for collector currents in lateral bipolar junction transistors is presented and used to describe the hybrid mode operation of these devices in the presence of a gate electrode over the base region. Results obtained from the analytical model are compared with those of computer simulations. Good agreement has been demonstrated with both numerical simulations and experimental data.<<ETX>>","PeriodicalId":286222,"journal":{"name":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"An analytical model for collector currents in gated lateral bipolar transistors\",\"authors\":\"K. Joardar\",\"doi\":\"10.1109/BIPOL.1992.274046\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A physically based, analytical model for collector currents in lateral bipolar junction transistors is presented and used to describe the hybrid mode operation of these devices in the presence of a gate electrode over the base region. Results obtained from the analytical model are compared with those of computer simulations. Good agreement has been demonstrated with both numerical simulations and experimental data.<<ETX>>\",\"PeriodicalId\":286222,\"journal\":{\"name\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1992.274046\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1992.274046","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An analytical model for collector currents in gated lateral bipolar transistors
A physically based, analytical model for collector currents in lateral bipolar junction transistors is presented and used to describe the hybrid mode operation of these devices in the presence of a gate electrode over the base region. Results obtained from the analytical model are compared with those of computer simulations. Good agreement has been demonstrated with both numerical simulations and experimental data.<>