DVS对COTS易失性ram功耗和SEE灵敏度的影响

2021 IEEE 22nd Latin American Test Symposium (LATS) Pub Date : 2021-10-27 DOI:10.1109/LATS53581.2021.9651751

Mohammadreza Rezaei, F. J. Franco, J. Fabero, H. Mecha, H. Puchner, J. A. Clemente

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引用次数: 0

摘要

实验研究了65 nm、90 nm和130 nm挥发性块体COTS sram在动态电压缩放(DVS)条件下对热中子辐照的SEU灵敏度。结果表明，单轴电导率与电导率呈线性关系。此外，研究表明，即使使用DVS会增加SEU截面，但考虑到功耗，这种方法是有益的。

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Impact of DVS on Power Consumption and SEE Sensitivity of COTS Volatile SRAMs

An experimental study on the SEU sensitivity of 65-nm, 90-nm, and 130-nm volatile bulk COTS SRAMs against thermal neutron irradiation while applying Dynamic Voltage Scaling (DVS) is presented. Results show a linear relation between the SEU cross-sections and Icc of the DUTs. Moreover, it is demonstrated that, even tough applying DVS increases the SEU cross-section, taking the power consumption into account, this approach is beneficial.

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2021 IEEE 22nd Latin American Test Symposium (LATS)

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