O. Charlon, M. Locher, H. Visser, D. Duperray, J. Cherr, M. Judson, A. Landesman, C. Hritz, U. Kohlschuetter, Yifeng Zhang, C. Ramesh, A. Daanen, M. Gao, S. Haas, V. Maheshwari, A. Bury, G. Nitsche, A. Wrzyszcz, W. Redman-White, H. Bonakdar, Rachid El Waffaoui, M. Bracey
{"title":"一款低功耗高性能SiGe BiCMOS 802.11a/b/g收发器IC,适用于蜂窝和蓝牙共存应用","authors":"O. Charlon, M. Locher, H. Visser, D. Duperray, J. Cherr, M. Judson, A. Landesman, C. Hritz, U. Kohlschuetter, Yifeng Zhang, C. Ramesh, A. Daanen, M. Gao, S. Haas, V. Maheshwari, A. Bury, G. Nitsche, A. Wrzyszcz, W. Redman-White, H. Bonakdar, Rachid El Waffaoui, M. Bracey","doi":"10.1109/ESSCIR.2005.1541576","DOIUrl":null,"url":null,"abstract":"This paper describes a low-power, high-performance WLAN 802.11 a/b/g radio transceiver optimized for mobile applications and co-existence with on-board cellular and Bluetooth systems. The direct conversion architecture is optimized to achieve uncompromised RF performance at low power. A key transceiver requirement is a sensitivity of -77dBm (at the LNA input) in the presence of a GSM 1900 transmitter interferer while in 54Mb/s OFDM mode. The receiver chain achieves a NF of 2.8/3.2dB, consuming 168/185mW at 2.8V for the 2.4/5GHz bands respectively. Signal loopback and transmit power detection techniques are used in conjunction with the baseband modem processor to calibrate the transmitter LO leakage and the transceiver I/Q imbalances. Fabricated in a 70GHz f/sub T/ 0.25/spl mu/m SiGe BiCMOS technology for system-in-package (SiP) use, the dual-band, tri-mode transceiver occupies only 4.6mm/sup 2/.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A low-power high-performance SiGe BiCMOS 802.11a/b/g transceiver IC for cellular and Bluetooth co-existence applications\",\"authors\":\"O. Charlon, M. Locher, H. Visser, D. Duperray, J. Cherr, M. Judson, A. Landesman, C. Hritz, U. Kohlschuetter, Yifeng Zhang, C. Ramesh, A. Daanen, M. Gao, S. Haas, V. Maheshwari, A. Bury, G. Nitsche, A. Wrzyszcz, W. Redman-White, H. Bonakdar, Rachid El Waffaoui, M. Bracey\",\"doi\":\"10.1109/ESSCIR.2005.1541576\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a low-power, high-performance WLAN 802.11 a/b/g radio transceiver optimized for mobile applications and co-existence with on-board cellular and Bluetooth systems. The direct conversion architecture is optimized to achieve uncompromised RF performance at low power. A key transceiver requirement is a sensitivity of -77dBm (at the LNA input) in the presence of a GSM 1900 transmitter interferer while in 54Mb/s OFDM mode. The receiver chain achieves a NF of 2.8/3.2dB, consuming 168/185mW at 2.8V for the 2.4/5GHz bands respectively. Signal loopback and transmit power detection techniques are used in conjunction with the baseband modem processor to calibrate the transmitter LO leakage and the transceiver I/Q imbalances. Fabricated in a 70GHz f/sub T/ 0.25/spl mu/m SiGe BiCMOS technology for system-in-package (SiP) use, the dual-band, tri-mode transceiver occupies only 4.6mm/sup 2/.\",\"PeriodicalId\":239980,\"journal\":{\"name\":\"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2005.1541576\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2005.1541576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low-power high-performance SiGe BiCMOS 802.11a/b/g transceiver IC for cellular and Bluetooth co-existence applications
This paper describes a low-power, high-performance WLAN 802.11 a/b/g radio transceiver optimized for mobile applications and co-existence with on-board cellular and Bluetooth systems. The direct conversion architecture is optimized to achieve uncompromised RF performance at low power. A key transceiver requirement is a sensitivity of -77dBm (at the LNA input) in the presence of a GSM 1900 transmitter interferer while in 54Mb/s OFDM mode. The receiver chain achieves a NF of 2.8/3.2dB, consuming 168/185mW at 2.8V for the 2.4/5GHz bands respectively. Signal loopback and transmit power detection techniques are used in conjunction with the baseband modem processor to calibrate the transmitter LO leakage and the transceiver I/Q imbalances. Fabricated in a 70GHz f/sub T/ 0.25/spl mu/m SiGe BiCMOS technology for system-in-package (SiP) use, the dual-band, tri-mode transceiver occupies only 4.6mm/sup 2/.