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引用次数: 1
摘要
提出了一种用于逐次逼近寄存器(SAR)模数转换器(adc)的全无源噪声整形结构。可以得到零接近于1的一阶噪声传递函数。额外的极将噪声整形效率提高到3 dB。因此,使用更高的过采样比(OSR)和增加的有效位数(ENOB)是可能的。该架构应用于联合微电子公司(UMC) 65 nm互补金属氧化物半导体(CMOS)的9.8位ENOB SAR ADC的设计,OSR等于10。采用6位电容式DAC。提议的体系结构在ENOB中提供了3.8个额外的位。等效输入带宽为200khz,采样率为4ms /s。
SAR ADC Architecture with Fully Passive Noise Shaping
A new fully passive noise-shaping architecture for successive approximation register (SAR) analog-to-digital converters (ADCs) was proposed. A first-order noise transfer function (NTF) with zero located nearly at one can be achieved. The additional pole increases the efficiency of noise shaping to further 3 dB. So, the use of higher over sampling ratios (OSR) and increased effective number of bits (ENOB) is possible. The architecture was applied to the design of a 9.8-bit ENOB SAR ADC in a 65 nm complementary metal-oxide semiconductor (CMOS) of United Microelectronics Corporation (UMC) with OSR equal to 10. A 6-bit capacitive DAC was used. The proposed architecture provides 3.8 additional bits in ENOB. The equalent input bandwitdth is equal to 200 kHz with the sampling rate equal to 4 MS/s.