带无源积分器的12b-ENOB 61µW噪声整形SAR ADC

Wenjuan Guo, Nan Sun
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引用次数: 51

摘要

本文提出了一种简单、鲁棒、低功耗的噪声整形SAR结构。它是完全被动的,只需要对传统的SAR ADC进行微小的修改。通过无源积分器,量化噪声、比较器噪声和DAC噪声以(1 - 0.75z-1)的噪声传递函数形成。与传统的多位δ - σ adc不同,DAC失配的噪声传递函数和误差传递函数都不受工艺电压-温度变化的影响。采用0.13μm CMOS工艺制作了原型芯片。在1.2V和2MS/s下,芯片功耗为61μW。SNDR增加6dB, Schreier FoM增加3dB, OSR增加一倍。在OSR为8时,SNDR为74dB, Schreier FoM为167dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 12b-ENOB 61µW noise-shaping SAR ADC with a passive integrator
This paper presents a novel noise shaping SAR architecture that is simple, robust and low power. It is fully passive and only needs minor modification to a conventional SAR ADC. Through a passive integrator, quantization noise, comparator noise and DAC noise are shaped with a noise transfer function of (1 - 0.75z-1). Unlike conventional multi-bit delta-sigma ADCs, both the noise transfer function and the error transfer function of DAC mismatches are immune to process-voltage-temperature variations. A prototype chip is fabricated in a 0.13μm CMOS process. At 1.2V and 2MS/s, the chip consumes 61μW power. SNDR increases by 6dB and the Schreier FoM increases by 3dB with OSR doubled. At an OSR of 8, SNDR is 74dB and the Schreier FoM is 167dB.
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