{"title":"一种用于塑料RFID的现场可编程防熔断存储器","authors":"B. Mattis, V. Subramanian","doi":"10.1109/DRC.2006.305063","DOIUrl":null,"url":null,"abstract":"We demonstrate an integrated field-programmable nonvolatile memory technology on plastic, thus realizing a low-cost memory technology for systems on plastic such as RFID tags and sensors that require post-fabrication encoding with unique ID numbers. The crossbar memory array is integrated with steering diodes for every memory element, thus ensuring excellent addressability and scalability to large array sizes. Pentacene-aluminum schottky diodes were combined with a polyvinylphenol (PVP) dielectric to create field programmable nonvolatile memory crossbar arrays on a flexible PEN substrate. Our devices show high programmed/unprogrammed current margins (up to 10,000) at read voltages of 6V. Programming voltages are >20V, providing excellent read-write margin.","PeriodicalId":259981,"journal":{"name":"2006 64th Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A field-programmable antifuse memory for RFID on plastic\",\"authors\":\"B. Mattis, V. Subramanian\",\"doi\":\"10.1109/DRC.2006.305063\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate an integrated field-programmable nonvolatile memory technology on plastic, thus realizing a low-cost memory technology for systems on plastic such as RFID tags and sensors that require post-fabrication encoding with unique ID numbers. The crossbar memory array is integrated with steering diodes for every memory element, thus ensuring excellent addressability and scalability to large array sizes. Pentacene-aluminum schottky diodes were combined with a polyvinylphenol (PVP) dielectric to create field programmable nonvolatile memory crossbar arrays on a flexible PEN substrate. Our devices show high programmed/unprogrammed current margins (up to 10,000) at read voltages of 6V. Programming voltages are >20V, providing excellent read-write margin.\",\"PeriodicalId\":259981,\"journal\":{\"name\":\"2006 64th Device Research Conference\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 64th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2006.305063\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 64th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2006.305063","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A field-programmable antifuse memory for RFID on plastic
We demonstrate an integrated field-programmable nonvolatile memory technology on plastic, thus realizing a low-cost memory technology for systems on plastic such as RFID tags and sensors that require post-fabrication encoding with unique ID numbers. The crossbar memory array is integrated with steering diodes for every memory element, thus ensuring excellent addressability and scalability to large array sizes. Pentacene-aluminum schottky diodes were combined with a polyvinylphenol (PVP) dielectric to create field programmable nonvolatile memory crossbar arrays on a flexible PEN substrate. Our devices show high programmed/unprogrammed current margins (up to 10,000) at read voltages of 6V. Programming voltages are >20V, providing excellent read-write margin.