基于离子轰击的m型阴极性能退化模拟

2013 IEEE 14th International Vacuum Electronics Conference (IVEC) Pub Date : 2013-05-21 DOI:10.1109/IVEC.2013.6571103

X. Shi, Hehong Fan, F. Song, Xingqun Zhao, S. Wan, Xiaohan Sun

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引用次数: 4

摘要

研究了考虑互扩散效应的离子轰击下m型阴极性能退化的模拟。可以估计溅射体积、溅射分布和离子斑发生时间，估计的溅射体积与以往的研究接近。对于300nm厚膜的m型recoated阴极，估计在2.06×105 h工作后会出现离子斑点。

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Performance degradation simulation for M-type cathode based on ion bombardment

Simulation of M-type cathode performance degradation is studied based on ion bombardment with interdiffusion effect considered. Sputtered volume, sputter distribution and ion spot occurrence time can be estimated, with estimated sputtered volume close to former researches. For M-type Re-coated cathode with 300nm-thick film, ion spots were estimated to appear after 2.06×105 h's working.

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2013 IEEE 14th International Vacuum Electronics Conference (IVEC)

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