采用选择性区金属有机化学气相沉积技术制备应变层InGaAs-GaAs埋置异质结构环形集成y耦合无源波导激光器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519331

T. Cockerill, M. Osowski, R. Lammert, J. Coleman

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引用次数: 6

摘要

只提供摘要形式。采用选择性面积生长的方法制备了一种集成y耦合无源波导的应变层InGaAs-GaAs埋置异质结构环形激光器。该器件工作(300k cw)单模与侧模抑制/spl ges/24 dB。

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A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition

Summary form only given. A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with an integrated Y-coupled passive waveguide is fabricated by selective-area growth. The device operates (300 K cw) single mode with side mode suppression /spl ges/24 dB.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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