基于28纳米CMOS技术的非亚稳SRAM单元设计

2019 IEEE 31st International Conference on Microelectronics (MIEL) Pub Date : 2019-09-16 DOI:10.1109/MIEL.2019.8889606

F. Crescioli, L. Frontini, V. Liberali, A. Stabile

{"title":"基于28纳米CMOS技术的非亚稳SRAM单元设计","authors":"F. Crescioli, L. Frontini, V. Liberali, A. Stabile","doi":"10.1109/MIEL.2019.8889606","DOIUrl":null,"url":null,"abstract":"This paper presents the design of an SRAM cell in 28 nm, specifically designed to avoid metastability at start-up. Metastable operation is avoided by unbalancing the size of transistors. Extensive simulations have confirmed that the probability of metastable operation is greatly reduced.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of Non-Metastable SRAM Cells in 28 nm CMOS Technology\",\"authors\":\"F. Crescioli, L. Frontini, V. Liberali, A. Stabile\",\"doi\":\"10.1109/MIEL.2019.8889606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of an SRAM cell in 28 nm, specifically designed to avoid metastability at start-up. Metastable operation is avoided by unbalancing the size of transistors. Extensive simulations have confirmed that the probability of metastable operation is greatly reduced.\",\"PeriodicalId\":391606,\"journal\":{\"name\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2019.8889606\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了一种28纳米SRAM电池的设计，该电池专门设计用于避免启动时的亚稳态。通过不平衡晶体管的尺寸，可以避免亚稳态操作。大量的模拟已经证实，亚稳运行的概率大大降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design of Non-Metastable SRAM Cells in 28 nm CMOS Technology

This paper presents the design of an SRAM cell in 28 nm, specifically designed to avoid metastability at start-up. Metastable operation is avoided by unbalancing the size of transistors. Extensive simulations have confirmed that the probability of metastable operation is greatly reduced.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 IEEE 31st International Conference on Microelectronics (MIEL)

自引率

0.00%

发文量