CMOS共面螺旋电感的串扰耦合效应

J. Mikkelsen, O. K. Jensen, T. Larsen
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引用次数: 19

摘要

研究了两种相邻共面螺旋电感之间的耦合效应,一种是不使用保护结构,另一种是使用简单的保护环。此外,在电感器之间的不同距离(190 /spl mu/m至1090 /spl mu/m)上评估了保护环的效果。传统的串扰预测模型是不充分的,一个包括互感耦合和直接电容耦合的扩展模型可以提供准确的拟合。测量低水平的串扰是困难的,在这种情况下,测试夹具本身的效果进行评估。返回电流路径在这里发现对低频结果有显著的影响。此外,基于测试夹具的激光切割,发现周围的地环可以提高串扰水平。使用简单的保护环可以将相邻电感的隔离度提高约10- 15db。在较大的距离上,具有保护环的增益减小,并最终在距离为1000 /spl mu/m时减小为零。对于间隔较近的器件,距离增加一倍可提供额外的20 dB串扰衰减。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Crosstalk coupling effects of CMOS co-planar spiral inductors
The coupling effects between two adjacent co-planar spiral inductors are characterized in two cases, one where no guard structure is used and one where simple guard-rings are used. In addition, the effect of guard-rings is evaluated at different distances (190 /spl mu/m to 1090 /spl mu/m) between inductors. The model traditionally used to predict this crosstalk is found to be insufficient and an extended model including mutual inductive coupling and direct capacitive coupling is shown to provide accurate fit. Measuring low levels of crosstalk is difficult and in this context the effect of the test fixture itself is evaluated. Return current paths are here found to have significant influence on low frequency results. Also, based on laser cutting of test fixtures, a surrounding ground-ring is found to increase the crosstalk level. The use of simple guard-rings is shown to improve isolation by approximately 10-15 dB for closely spaced adjacent inductors. At larger distances the gain from having a guard-ring reduces and eventually reduces to zero at a distance of 1000 /spl mu/m. For closely spaced devices a doubling of distance is found to provide an additional 20 dB attenuation of crosstalk.
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