垂直和横向光电晶体管的VHDL-AMS建模

2004 IEEE International Conference on Industrial Technology, 2004. IEEE ICIT '04. Pub Date : 2004-12-08 DOI:10.1109/ICIT.2004.1490272

A. Alexandre, A. Pinna, B. Granado, P. Garda

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引用次数: 5

摘要

为了能够模拟包含光电晶体管的APS单元的成像系统，本文阐述了基于物理方法的电模型，并用VHDL-AMS语言编写了该模型。它可以模拟光电晶体管灵敏度的光谱响应，并根据入射光的功率研究其线性度。

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Modeling of vertical and lateral phototransistors using VHDL-AMS

In this paper, to be able to simulate imaging systems containing APS cells including phototransistors, an electric model based on a physical approach was elaborated and it was written in the VHDL-AMS language. It allows the simulation of the spectral response of phototransistors sensibilities and the study of their linearity according to the power of the incident light.

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2004 IEEE International Conference on Industrial Technology, 2004. IEEE ICIT '04.

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