基于亚阈值区域分压器阵列的物理不可克隆函数

2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS) Pub Date : 2018-08-01 DOI:10.1109/MWSCAS.2018.8624014

Aishwarya Bahudhanam Venkatasubramaniyan, A. Sanyal

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引用次数: 1

摘要

本文根据工作在亚阈值区域的mosfet的阈值电压随机变化大的特点，提出了一种简单、低能量的硅物理不可克隆功能阵列的新结构。所提出的结构是一个具有260个挑战响应对的强硅PUF，能耗为0.48pJ/bit。该PUF在65nm CMOS技术下进行了仿真，标准化的inter-HD为0.4982,intra-HD为0.0225。

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Physically Unclonable Function based on Voltage Divider Arrays in Subthreshold Region

This paper proposes a novel architecture of a simple, low energy silicon physically unclonable function arrays depending on the large random variation of threshold voltage of MOSFETs operating in subthreshold region. The proposed structure is a strong silicon PUF with 260 challenge response pairs and consumes an energy of 0.48pJ/bit. The PUF is simulated in 65nm CMOS technology and has a normalized inter-HD of 0.4982 and intra-HD of 0.0225.

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来源期刊

2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)

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