PSP紧凑型中35nm MOSFET电容元件的评估

2010 18th Iranian Conference on Electrical Engineering Pub Date : 2010-05-11 DOI:10.1109/IRANIANCEE.2010.5507045

D. Dideban, B. Cheng, N. Moezi, Xingsheng Wang, A. Asenov

{"title":"PSP紧凑型中35nm MOSFET电容元件的评估","authors":"D. Dideban, B. Cheng, N. Moezi, Xingsheng Wang, A. Asenov","doi":"10.1109/IRANIANCEE.2010.5507045","DOIUrl":null,"url":null,"abstract":"In this paper the capacitance components of the PSP compact model which is selected as successor of BSIM4 by the Compact Modelling Council (CMC) are investigated and simulated in HSPICE for the state of the art 35nm MOSFET device. The simulations are compared with TCAD results in both transcapacitance components between the device terminals and time domain to show the impact of accuracy of compact model on real circuit simulations.","PeriodicalId":282587,"journal":{"name":"2010 18th Iranian Conference on Electrical Engineering","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of 35nm MOSFET capacitance components in PSP compact model\",\"authors\":\"D. Dideban, B. Cheng, N. Moezi, Xingsheng Wang, A. Asenov\",\"doi\":\"10.1109/IRANIANCEE.2010.5507045\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the capacitance components of the PSP compact model which is selected as successor of BSIM4 by the Compact Modelling Council (CMC) are investigated and simulated in HSPICE for the state of the art 35nm MOSFET device. The simulations are compared with TCAD results in both transcapacitance components between the device terminals and time domain to show the impact of accuracy of compact model on real circuit simulations.\",\"PeriodicalId\":282587,\"journal\":{\"name\":\"2010 18th Iranian Conference on Electrical Engineering\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 18th Iranian Conference on Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2010.5507045\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 18th Iranian Conference on Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2010.5507045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文针对目前最先进的35nm MOSFET器件，在HSPICE中研究并仿真了由compact modeling Council (CMC)选择作为BSIM4继任者的PSP compact模型的电容分量。仿真结果与TCAD结果进行了比较，显示了紧凑模型的精度对实际电路仿真的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Evaluation of 35nm MOSFET capacitance components in PSP compact model

In this paper the capacitance components of the PSP compact model which is selected as successor of BSIM4 by the Compact Modelling Council (CMC) are investigated and simulated in HSPICE for the state of the art 35nm MOSFET device. The simulations are compared with TCAD results in both transcapacitance components between the device terminals and time domain to show the impact of accuracy of compact model on real circuit simulations.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 18th Iranian Conference on Electrical Engineering

自引率

0.00%

发文量