重带电粒子对N-MOSFET器件结构电学特性影响的模拟

2019 International Conference on Advanced Technologies for Communications (ATC) Pub Date : 2019-10-01 DOI:10.1109/ATC.2019.8924508

Dao Dinh Ha, Tran Tuan Trung, Nguyen Trong Quang, I. Lovshenko, V. Khanko, V. Stempitsky

{"title":"重带电粒子对N-MOSFET器件结构电学特性影响的模拟","authors":"Dao Dinh Ha, Tran Tuan Trung, Nguyen Trong Quang, I. Lovshenko, V. Khanko, V. Stempitsky","doi":"10.1109/ATC.2019.8924508","DOIUrl":null,"url":null,"abstract":"The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm2/mg, 10.1 MeV.cm2/mg, 18.8 MeV.cm2/mg, 55.0 MeV.cm2/mg, corresponding to nitrogen ions15N+4with energy E = 1.87 MeV, argon40Ar+12with energy E = 372 MeV, ferrum56Fe+15 with energy E = 523 MeV, xenon131Xe+35 with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature.","PeriodicalId":409591,"journal":{"name":"2019 International Conference on Advanced Technologies for Communications (ATC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure\",\"authors\":\"Dao Dinh Ha, Tran Tuan Trung, Nguyen Trong Quang, I. Lovshenko, V. Khanko, V. Stempitsky\",\"doi\":\"10.1109/ATC.2019.8924508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm2/mg, 10.1 MeV.cm2/mg, 18.8 MeV.cm2/mg, 55.0 MeV.cm2/mg, corresponding to nitrogen ions15N+4with energy E = 1.87 MeV, argon40Ar+12with energy E = 372 MeV, ferrum56Fe+15 with energy E = 523 MeV, xenon131Xe+35 with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature.\",\"PeriodicalId\":409591,\"journal\":{\"name\":\"2019 International Conference on Advanced Technologies for Communications (ATC)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Advanced Technologies for Communications (ATC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ATC.2019.8924508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Advanced Technologies for Communications (ATC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATC.2019.8924508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了线性能量传递值为1.81 MeV·cm2/mg, 10.1 MeV的重带电粒子撞击的模拟结果。cm2/mg, 18.8 MeV。cm2/mg, 55.0 MeV。cm2/mg，分别对应能量为E = 1.87 MeV的氮离子15n +4、能量为E = 372 MeV的argon40Ar+12、能量为E = 523 MeV的ferrum56Fe+15、能量为E = 1217 MeV的xenon131Xe+35，在运动轨迹和环境温度变化时对n-MOSFET器件结构电学特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure

The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm²/mg, 10.1 MeV.cm²/mg, 18.8 MeV.cm²/mg, 55.0 MeV.cm²/mg, corresponding to nitrogen ions¹⁵N⁺⁴with energy E = 1.87 MeV, argon⁴⁰Ar⁺¹²with energy E = 372 MeV, ferrum⁵⁶Fe⁺¹⁵ with energy E = 523 MeV, xenon¹³¹Xe⁺³⁵ with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 International Conference on Advanced Technologies for Communications (ATC)

自引率

0.00%

发文量