{"title":"使用4晶体管单元的动态内容可寻址存储器","authors":"J. Delgado-Frías, A. Yu, J. Nyathi","doi":"10.1109/MMICA.1999.833611","DOIUrl":null,"url":null,"abstract":"A novel ternary dynamic content addressable memory cell with coupled match lines is presented here. The dynamic CAM cell contains only four n-type transistors. This cell is capable of storing and matching three states, hence the term ternary; these states are: zero (0), one (1) and don't care (X). Circuit simulations show that our dynamic CAM cell performs all the basic operations (read, write and match) at a good speed. In order to use the proposed cell in a CAM array, we developed a cut-off scheme to deal with coupling.","PeriodicalId":221297,"journal":{"name":"Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A dynamic content addressable memory using a 4-transistor cell\",\"authors\":\"J. Delgado-Frías, A. Yu, J. Nyathi\",\"doi\":\"10.1109/MMICA.1999.833611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel ternary dynamic content addressable memory cell with coupled match lines is presented here. The dynamic CAM cell contains only four n-type transistors. This cell is capable of storing and matching three states, hence the term ternary; these states are: zero (0), one (1) and don't care (X). Circuit simulations show that our dynamic CAM cell performs all the basic operations (read, write and match) at a good speed. In order to use the proposed cell in a CAM array, we developed a cut-off scheme to deal with coupling.\",\"PeriodicalId\":221297,\"journal\":{\"name\":\"Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-07-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MMICA.1999.833611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMICA.1999.833611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A dynamic content addressable memory using a 4-transistor cell
A novel ternary dynamic content addressable memory cell with coupled match lines is presented here. The dynamic CAM cell contains only four n-type transistors. This cell is capable of storing and matching three states, hence the term ternary; these states are: zero (0), one (1) and don't care (X). Circuit simulations show that our dynamic CAM cell performs all the basic operations (read, write and match) at a good speed. In order to use the proposed cell in a CAM array, we developed a cut-off scheme to deal with coupling.