采用InGaP/GaAs HBT技术的低相位噪声双交叉耦合Colpitts压控振荡器

B. Shrestha, Nam-Young Kim
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引用次数: 12

摘要

采用InGaP/GaAs HBT技术设计了双交叉耦合差分科尔皮茨压控振荡器(VCO),用于自适应反馈干扰抵消系统(AF-ICS)。本文采用两个开关晶体管来控制压控振荡器核心中的偏置电流和电压,从而节省了功耗。当控制电压为0 V时,VCO在载波频率(1.630 GHz)偏移1 MHz时实现了出色的相位噪声特性-135 dBc/Hz,其调谐范围约为218 MHz,输出功率为-3.91 dBm(包括电缆损耗)。它显示了-180.5 dBc/Hz的质量因数(FoM)。在槽电路中集成了两对基极集电极(BC)二极管,以增加VCO调谐范围。优化后的芯片尺寸为0.9 mm × 0.9 mm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Double Cross Coupled Colpitts VCO with Low Phase Noise using InGaP/GaAs HBT Technology
The proposed double cross-coupled differential Colpitts voltage controlled oscillator (VCO) is designed using InGaP/GaAs HBT technology for an adaptive feedback interference cancellation system (AF-ICS). In this paper, two switching transistors were used to steer the bias current and voltage in the VCO core, thereby saving power. The VCO achieves excellent phase noise characteristics of -135 dBc/Hz at 1 MHz offset from carrier frequency (1.630 GHz) when supplied with a control voltage of 0 V Also, its tuning range is around 218 MHz with an output power of -3.91 dBm (including cable loss). It shows the figure of merit (FoM) of -180.5 dBc/Hz. Two pairs of base-collector (BC) diodes are integrated in the tank circuit to increase the VCO tuning range. The optimized chip size is 0.9 mm x 0.9 mm.
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