CMP工艺分析的实验验证

Y. Hashimoto, N. Suzuki, R. Hino, E. Shamoto
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引用次数: 1

摘要

本研究对化学机械抛光(CMP)过程的分析模型进行了实验验证,重点关注摩擦力和材料去除率的分布。建立了能够预测摩擦力和材料去除率分布的流固耦合分析模型。利用自制的CMP系统进行了氧化物CMP实验,并将测量的摩擦力和材料去除率分布与分析结果进行了比较。结果证实了晶圆的转速影响摩擦力和材料去除率的分布。此外,所建立的分析模型所确定的结果与测量结果一致。晶片不旋转时的摩擦力大小比晶片以与抛光垫相同的速度旋转时变小。摩擦力的方向与抛光垫的旋转中心相倾斜。当晶圆片不旋转时,晶圆片边缘周围的材料去除率比其他区域高。特别是前缘周围和抛光垫旋转半径较大的区域,它变得很高。用分析结果解释了摩擦力的这些特性和材料去除率的分布。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental Verification of CMP Process Analysis
The present study performs an experimental verification of an analytical model of the Chemical Mechanical Polishing (CMP) process, focusing on friction force and the distribution of the material removal rate. A coupled Fluid-Structure analytical model, which can predict the friction force and the distribution of the material removal rate, is developed. Oxide CMP experiments are conducted using a fabricated CMP system, and measured friction force and distribution of the material removal rate are compared with the analytical results. As a result, it is confirmed that the wafer's rotational speed affects the friction force and the distribution of the material removal rate. Additionally, the results determined by the developed analytical model agree with the measurements. The magnitude of the friction force under a condition in which the wafer does not rotate becomes smaller than when the wafer rotates at the same speed as the polishing pad. The direction of the friction force inclines against the rotational center of the polishing pad. The material removal rate when the wafer does not rotate is high around the edge of the wafer as compared with that at other areas. In particular, it becomes high around the leading edge and the area where the rotational radius of the polishing pad is large. These specific characteristics of the friction force and the distribution of the material removal rate are explained using the analytical results.
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