{"title":"一个0 dB-IL, 2140/spl plusmn/ 30mhz带通滤波器,利用标准CMOS中的q增强螺旋电感","authors":"T. Soorapanth, S. Wong","doi":"10.1109/VLSIC.2001.934179","DOIUrl":null,"url":null,"abstract":"A 3/sup rd/-order Chebyshev bandpass filter, that employs on-chip passive elements with Q-enhancement technique, achieves an insertion loss of 0 dB and a passband of 60 MHz around a center frequency of 2140 MHz. Fabricated in a 0.25-/spl mu/m CMOS, the filter operates with 2.5-V supply and 7 mA. The filter occupies an area of 1.3 mm /spl times/2.7 mm.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"241 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"110","resultStr":"{\"title\":\"A 0 dB-IL, 2140/spl plusmn/30 MHz bandpass filter utilizing Q-enhanced spiral inductors in standard CMOS\",\"authors\":\"T. Soorapanth, S. Wong\",\"doi\":\"10.1109/VLSIC.2001.934179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 3/sup rd/-order Chebyshev bandpass filter, that employs on-chip passive elements with Q-enhancement technique, achieves an insertion loss of 0 dB and a passband of 60 MHz around a center frequency of 2140 MHz. Fabricated in a 0.25-/spl mu/m CMOS, the filter operates with 2.5-V supply and 7 mA. The filter occupies an area of 1.3 mm /spl times/2.7 mm.\",\"PeriodicalId\":346869,\"journal\":{\"name\":\"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)\",\"volume\":\"241 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"110\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2001.934179\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2001.934179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 110
摘要
采用片上无源元件和q增强技术的3/sup /阶切比雪夫带通滤波器,在中心频率2140 MHz附近实现了0 dB的插入损耗和60 MHz的通带。在0.25-/spl μ m CMOS中制造,滤波器工作在2.5 v电源和7 mA。过滤器的面积为1.3 mm /spl × /2.7 mm。
A 0 dB-IL, 2140/spl plusmn/30 MHz bandpass filter utilizing Q-enhanced spiral inductors in standard CMOS
A 3/sup rd/-order Chebyshev bandpass filter, that employs on-chip passive elements with Q-enhancement technique, achieves an insertion loss of 0 dB and a passband of 60 MHz around a center frequency of 2140 MHz. Fabricated in a 0.25-/spl mu/m CMOS, the filter operates with 2.5-V supply and 7 mA. The filter occupies an area of 1.3 mm /spl times/2.7 mm.