具有优异性能(JMAX > 107A/cm2)的尺寸(~ 30nm)隧道势垒选择器(W/Ta2O5/TaOx/TiO2/TiN)的电气特性和可靠性

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894431

J. Woo, Jeonghwan Song, Kibong Moon, Ji Hyun Lee, E. Cha, A. Prakash, Daeseok Lee, Sangheon Lee, Jaesung Park, Y. Koo, Chan Gyung Park, H. Hwang

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引用次数: 17

摘要

我们展示了一种性能优异的选择器(JMAX > 107A/cm2，切换速度为2O5/TaOx/TiO2/TiN)，氧化层极薄(<;10 nm)。通过对指数I-V曲线的综合理解，系统考察了尺度(面积和厚度)、寄生分量等内、外因素的影响。

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Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2)

We demonstrate a selector device with excellent performances (J_MAX > 10⁷A/cm², switching speed <; 20ns) at the 30nm cell size. Furthermore, these promising device characteristics were achieved in a fully CMOS compatible stack (W/Ta₂O₅/TaO_x/TiO₂/TiN) with extremely thin oxide layer (<; 10nm). Through the comprehensive understanding on the exponential I-V curve, the effect of intrinsic/extrinsic factors such as scaling (area and thickness), and parasitic components were systemically investigated.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量