基于VNA的测量和非线性建模的高效射频电路设计

S. Dellier, A. Xiong, C. Charbonniaud, C. Mazière, C. Enguehard, T. Gasseling
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引用次数: 3

摘要

射频行业的所有参与者都在寻求开发高效电路,并愿意投入大量资金来实现这一目标。提高电源效率可以降低功耗,从而减少对电池提供的资源的使用,从而减小冷却系统的尺寸,提高可靠性,并最终降低电费。对于射频功率放大器电路的高级设计,这需要详细了解可以利用最佳性能的最佳匹配条件。如果射频设计人员能够使用精确的晶体管模型和适当的设计方法进行仿真,那么就能达到设计目标。如果没有可用的模型,则必须找到替代方法,以保持最佳的RF设计。在后一种情况下,对于芯片或封装晶体管,提出了两种方法。在没有完整的紧凑晶体管非线性模型的情况下,这两种方法都有助于保证高效放大器的设计流程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
VNA Based Measurements and Nonlinear Modeling for Efficient RF Circuit Design
All the players in RF industry are looking to develop high efficiency circuits, and are willing to invest heavily to achieve this target. Increasing power efficiency enables decreasing power consumption, thus reducing the use of the resources provided from the battery, to reduce the size of cooling systems, improve reliability, and ultimately reduce the electricity bill. For advanced design of RF power amplifier circuits, this requires a detailed knowledge of the optimal matching conditions that can leverage the best performances. If the RF designer can use an accurate transistor model for the simulation with a proper design method, then the design target will be hit. If there is no model available, alternative methods must be found in order to retain the best RF design. In the later case, for die or packaged transistor, two approaches are proposed. Both tend to secure the design flow of high efficiency amplifier when a complete compact transistor nonlinear model is not available.
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