A novel dual direction SCR device for advanced nanoscale CMOS process

This paper presents a novel dual direction silicon-controlled rectifier device for electrostatic discharge (ESD) protection. An additional p-type ESD implantation layer was added to realize the proposed device (EDDSCR), playing the role of P-well in the traditional Dual SCR. A modified EDDSCR (MEDDSCR) with lower trigger voltage by inserted a PMOS is also proposed. TCAD simulation indicates that the proposed device has advantages of low trigger voltage, low conduction resistance, and good latch-up immunity, making it very suitable for ESD protection in I/O and Core circuits of 28 nm CMOS process.