{"title":"基于CMOS 0.18μm技术的DICE和容错延迟滤波技术的抗辐射库","authors":"Yangsheng Wang, Yanyan Gao, Chong Feng, N. Zhang","doi":"10.1109/ASICON47005.2019.8983582","DOIUrl":null,"url":null,"abstract":"A radiation resistant standard cell library is completed based on SMIC 0.18 μm technology in this paper. Standard cell library includes combinatorial logic cells and sequential logic cells. SET (Single Event Transient) effect always occurs in combinatorial logic cells, and SEU (Single Event Upset) effect always occurs in sequential logic cells. SEL(Single Event Latchup) and TID(Total Ionizing Dose) effects affect all logic cells. According to radiation effects, logic cells in the standard cell library are designed with harden methods at the circuit level and the layout level. Combination logic cells adopt fault-tolerant delay filtering method in circuit level, and sequential logic cells use DICE structure in circuit design. A guard ring has been added to the layout design for the SEL and TID effects. Then physical information and timing information are extracted for all cells, and the library building process is completed. Finally we use EDA tools to verify the availability of the anti-radiation library.","PeriodicalId":319342,"journal":{"name":"2019 IEEE 13th International Conference on ASIC (ASICON)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A radiation resistant library based on DICE and fault-tolerant delay filtering techniques in CMOS 0.18μm technology\",\"authors\":\"Yangsheng Wang, Yanyan Gao, Chong Feng, N. Zhang\",\"doi\":\"10.1109/ASICON47005.2019.8983582\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A radiation resistant standard cell library is completed based on SMIC 0.18 μm technology in this paper. Standard cell library includes combinatorial logic cells and sequential logic cells. SET (Single Event Transient) effect always occurs in combinatorial logic cells, and SEU (Single Event Upset) effect always occurs in sequential logic cells. SEL(Single Event Latchup) and TID(Total Ionizing Dose) effects affect all logic cells. According to radiation effects, logic cells in the standard cell library are designed with harden methods at the circuit level and the layout level. Combination logic cells adopt fault-tolerant delay filtering method in circuit level, and sequential logic cells use DICE structure in circuit design. A guard ring has been added to the layout design for the SEL and TID effects. Then physical information and timing information are extracted for all cells, and the library building process is completed. Finally we use EDA tools to verify the availability of the anti-radiation library.\",\"PeriodicalId\":319342,\"journal\":{\"name\":\"2019 IEEE 13th International Conference on ASIC (ASICON)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 13th International Conference on ASIC (ASICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON47005.2019.8983582\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 13th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON47005.2019.8983582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A radiation resistant library based on DICE and fault-tolerant delay filtering techniques in CMOS 0.18μm technology
A radiation resistant standard cell library is completed based on SMIC 0.18 μm technology in this paper. Standard cell library includes combinatorial logic cells and sequential logic cells. SET (Single Event Transient) effect always occurs in combinatorial logic cells, and SEU (Single Event Upset) effect always occurs in sequential logic cells. SEL(Single Event Latchup) and TID(Total Ionizing Dose) effects affect all logic cells. According to radiation effects, logic cells in the standard cell library are designed with harden methods at the circuit level and the layout level. Combination logic cells adopt fault-tolerant delay filtering method in circuit level, and sequential logic cells use DICE structure in circuit design. A guard ring has been added to the layout design for the SEL and TID effects. Then physical information and timing information are extracted for all cells, and the library building process is completed. Finally we use EDA tools to verify the availability of the anti-radiation library.