峰值效率87%，37W，带GaN输出级的H类音频放大器

2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) Pub Date : 2018-10-01 DOI:10.1109/NORCHIP.2018.8573508

Nardi Utomo, L. Siek, H. G. Yap, D. Disney, L. Selvaraj, Lulu Peng

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引用次数: 1

摘要

提出了一种基于GaN晶体管输出级的高输出功率H类音频放大器的设计方案。本设计在0.18- $\mu$ m BCD工艺中实现。本文介绍了驱动GaN输出级和提高H类放大器效率的几种设计技术。该设计静态功耗为706.3mW，可向32位$\Omega$负载提供高达37W的峰值输出功率，峰值功率效率为87%. This design achieves the lowest THD+N ratio of -70.17dB.

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An 87% Peak Efficiency, 37W, Class H Audio Amplifier with GaN Output Stage

This paper presents a novel high output power class H audio amplifier design with GaN transistors output stage. The design is implemented in 0.18-$\mu$m BCD process. Several design techniques to drive the GaN output stage and to improve the efficiency of the class H amplifier are introduced in this paper. The design consumes 706.3mW quiescent power and can deliver up to 37W peak output power to the load of 32$\Omega$ with the peak power efficiency of 87%. This design achieves the lowest THD+N ratio of -70.17dB.

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2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)

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