微波PHEMT晶体管的高精度大信号建模

Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144) Pub Date : 2000-08-08 DOI:10.1109/MWSCAS.2000.951580

J.P. Mima, B. Huang, J. Johnson, G. Branner

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引用次数: 4

摘要

本文介绍了开发高精度PHEMT电路模型的步骤，该模型主要用于准确预测直流、小信号和大信号微波性能。该模型在宽输入功率范围内具有高精度的基频和高阶谐波性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High precision large signal modeling of microwave PHEMT transistors

This paper presents the steps leading to development of a highly accurate PHEMT circuit model primarily for accurate prediction of DC, small and large signal microwave performance. This model characterizes the fundamental and higher order harmonic performance over a broad range of input power with a high degree of accuracy.

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Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems (Cat.No.CH37144)

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