{"title":"高电阻率li扩散砷化镓的性能","authors":"H. Gíslason, B. H. Yang, M. Linnarsson","doi":"10.1109/SIM.1992.752677","DOIUrl":null,"url":null,"abstract":"The compensation of electrical conductivity of a wide range of n-type and p-type GaAs diffused with the group-I element Li has been investigated. For diffusion temperatures exceeding 700-800 /spl deg/C a full compensation of all conducting samples is obtained in undoped, n-type and p-type samples. The fully compensated samples show resistivity higher than 10/sup 7/ /spl omega/ cm. The photoluminescence of these samples is characterized by excitation dependent emissions which shift to lower energies with increasing degree of compensation. Electrical and optical properties of the Li-compensated samples are discussed in terms of buried Schottky barriers and fluctuations of the electrostatic potential in impure, compensated crystals.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"171 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Properties of high-resistivity Li-diffused GaAs\",\"authors\":\"H. Gíslason, B. H. Yang, M. Linnarsson\",\"doi\":\"10.1109/SIM.1992.752677\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The compensation of electrical conductivity of a wide range of n-type and p-type GaAs diffused with the group-I element Li has been investigated. For diffusion temperatures exceeding 700-800 /spl deg/C a full compensation of all conducting samples is obtained in undoped, n-type and p-type samples. The fully compensated samples show resistivity higher than 10/sup 7/ /spl omega/ cm. The photoluminescence of these samples is characterized by excitation dependent emissions which shift to lower energies with increasing degree of compensation. Electrical and optical properties of the Li-compensated samples are discussed in terms of buried Schottky barriers and fluctuations of the electrostatic potential in impure, compensated crystals.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"171 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752677\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The compensation of electrical conductivity of a wide range of n-type and p-type GaAs diffused with the group-I element Li has been investigated. For diffusion temperatures exceeding 700-800 /spl deg/C a full compensation of all conducting samples is obtained in undoped, n-type and p-type samples. The fully compensated samples show resistivity higher than 10/sup 7/ /spl omega/ cm. The photoluminescence of these samples is characterized by excitation dependent emissions which shift to lower energies with increasing degree of compensation. Electrical and optical properties of the Li-compensated samples are discussed in terms of buried Schottky barriers and fluctuations of the electrostatic potential in impure, compensated crystals.
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