基于二元逆变器的超低电压半浮栅跨导放大器

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009) Pub Date : 2009-12-01 DOI:10.1109/ICECS.2009.5410956

Y. Berg

{"title":"基于二元逆变器的超低电压半浮栅跨导放大器","authors":"Y. Berg","doi":"10.1109/ICECS.2009.5410956","DOIUrl":null,"url":null,"abstract":"In this paper we present an ultra low-voltage differential transconductance amplifier. The amplifier is based on clocked semi floating-gate transistors. Rail to rail input signals may be processed and the amplifier produce a rail to rail output. Simulated data are valid for a STM 90nm CMOS process.","PeriodicalId":343974,"journal":{"name":"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)","volume":"6 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Ultra low voltage semi-floating-gate transconductance amplifier based on binary inverters\",\"authors\":\"Y. Berg\",\"doi\":\"10.1109/ICECS.2009.5410956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present an ultra low-voltage differential transconductance amplifier. The amplifier is based on clocked semi floating-gate transistors. Rail to rail input signals may be processed and the amplifier produce a rail to rail output. Simulated data are valid for a STM 90nm CMOS process.\",\"PeriodicalId\":343974,\"journal\":{\"name\":\"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)\",\"volume\":\"6 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2009.5410956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2009.5410956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文设计了一种超低电压差分跨导放大器。放大器是基于时钟半浮栅晶体管。可以对轨到轨输入信号进行处理，并且放大器产生轨到轨输出。模拟数据对STM 90nm CMOS工艺有效。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ultra low voltage semi-floating-gate transconductance amplifier based on binary inverters

In this paper we present an ultra low-voltage differential transconductance amplifier. The amplifier is based on clocked semi floating-gate transistors. Rail to rail input signals may be processed and the amplifier produce a rail to rail output. Simulated data are valid for a STM 90nm CMOS process.

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来源期刊

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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