{"title":"设计高频模拟集成电路的半物理双极晶体管模型","authors":"H. Rein, M. Schroter, A. Koldehoff, K. Worner","doi":"10.1109/BIPOL.1992.274047","DOIUrl":null,"url":null,"abstract":"A compact transistor model that is well suited for the design of very-high-frequency analog ICs and advanced narrow-emitter transistors is presented. It takes into account non-quasi-static transistor behavior and HF emitter current crowding as well as emitter-periphery and high-current effects. Modeling of the transit time, the base resistance, and the emitter junction capacitance was improved. Besides the simulation of HF analog ICs, the model proved to be well suited for simulating the switching behavior of high-speed digital ICs.<<ETX>>","PeriodicalId":286222,"journal":{"name":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A semi-physical bipolar transistor model for the design of very-high-frequency analog ICs\",\"authors\":\"H. Rein, M. Schroter, A. Koldehoff, K. Worner\",\"doi\":\"10.1109/BIPOL.1992.274047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A compact transistor model that is well suited for the design of very-high-frequency analog ICs and advanced narrow-emitter transistors is presented. It takes into account non-quasi-static transistor behavior and HF emitter current crowding as well as emitter-periphery and high-current effects. Modeling of the transit time, the base resistance, and the emitter junction capacitance was improved. Besides the simulation of HF analog ICs, the model proved to be well suited for simulating the switching behavior of high-speed digital ICs.<<ETX>>\",\"PeriodicalId\":286222,\"journal\":{\"name\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1992.274047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1992.274047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A semi-physical bipolar transistor model for the design of very-high-frequency analog ICs
A compact transistor model that is well suited for the design of very-high-frequency analog ICs and advanced narrow-emitter transistors is presented. It takes into account non-quasi-static transistor behavior and HF emitter current crowding as well as emitter-periphery and high-current effects. Modeling of the transit time, the base resistance, and the emitter junction capacitance was improved. Besides the simulation of HF analog ICs, the model proved to be well suited for simulating the switching behavior of high-speed digital ICs.<>
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