基于SiGe:C BiCMOS技术的20ghz lc - vco设计与优化

2008 4th IEEE International Conference on Circuits and Systems for Communications Pub Date : 2008-05-26 DOI:10.1109/ICCSC.2008.143

J. Verdier, J.C.N. Perez, C. Gontrand

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引用次数: 4

摘要

介绍了用于20 GHz低成本低功耗通信系统的全集成压控振荡器(VCO)的设计与分析。研究了两种差分拓扑:使用交叉耦合差分对的平衡Colpitts VCO和LC-VCO。我们专注于振荡频率，调谐范围，相位噪声，输出功率优化和缓冲级规格。已经采用单片BiCMOS技术生产了fT=55 GHz的SiGe:C异质结双极晶体管。

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Design and Optimization of 20 GHz LC-VCOs in SiGe:C BiCMOS Technology

The design and analysis of fully integrated voltage controlled oscillators (VCO) for 20 GHz low cost and low power communication system is presented in this paper. Two differential topologies have been studied: balanced Colpitts VCO and LC-VCO using a cross-coupled differential pair. We have focussed on oscillation frequency, tuning range, phase noise, and output power optimization and buffer stage specifications. SiGe:C hetero-junction bipolar transistors of fT=55 GHz have been used and produced with a monolithic BiCMOS technology.

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2008 4th IEEE International Conference on Circuits and Systems for Communications

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