高压功率转换电路中相邻MOSFET开关操作引起MOSFET栅极电压波动的研究

2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo) Pub Date : 2013-12-01 DOI:10.1109/EMCCOMPO.2013.6735183

T. Funaki

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引用次数: 5

摘要

高压SiC功率MOSFET的发展使高压的快速开关成为可能。高压快速开关导致的高dv/dt导致功率MOSFET由于栅极电压波动而产生自导通现象，难以正常工作。这种现象被认为是内部电磁兼容。本文研究了自开现象的机理，并对抑制方法进行了探讨。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit

The development of high voltage SiC power MOSFET has made the fast switching of high voltage possible. The high dv/dt caused by fast high voltage switching induces the difficulty of mal-operation of power MOSFET with the self turn-on phenomenon by the fluctuation of gate voltage. This phenomenon is recognized as intra EMC. This paper studies the mechanism of self turn-on phenomenon and discusses the suppression method.

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2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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