外加电场中δ掺杂量子阱的子带间能量差

2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2022-10-10 DOI:10.1109/ELNANO54667.2022.9927043

V. Tulupenko, V. Akimov, R. Demediuk, A. Tiutiunnyk, C. Duque, D. Sushchenko, O. Fomina, Á. Morales, D. Laroze

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引用次数: 0

摘要

在量子阱内掺有δ的半导体量子阱的子带之间的能量差可以通过电子温度来调节。该效应可用于可调谐半导体光学器件的新原理图。本文研究了在20 nm宽的SiGe/Si中，在阱的边缘和中心掺杂氢供体时，两个低尺寸量子化子带之间的差异对电子温度和外部横向电场的动力学特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Intersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field

The energy differences between subbands of a semiconductor quantum well delta-doped inside the well can be tuned by electronic temperature. The effect can be used in a novel schematic of a tunable semiconductor optical device. Here we study numerically the dynamics of the difference between two lower size-quantized subbands against electronic temperature and external transverse electric field in 20 nm wide SiGe/Si doped with a hydrogenic donor to the edge and the center of the well.

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来源期刊

2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)

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