Ge1−xSnx finfet的电子弹道电流增强

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839656

H. Lan, C. W. Liu

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引用次数: 0

摘要

用非局域经验赝势法模拟了Sn含量为6.5%时Ge1-xSnx的间接直接跃迁过程。在计算Ge1-xSnx finfet的电子弹道电流时，考虑了Γ谷的非抛物线带的约束质量、态密度和电导率质量。由于载流子从小注入速度的间接L谷向直接Γ谷和其他高注入速度的间接L谷转移，使Sn含量合金化和施加外应力的结合增强了弹道电流。

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Electron ballistic current enhancement of Ge1−xSnx FinFETs

The indirect-direct transition of Ge1-xSnx at Sn content 6.5% is simulated by nonlocal empirical pseudopotential method. The non-parabolicity band of Γ valley is considered for confined mass, density of state, and conductivity mass for the electron ballistic current calculation of Ge1-xSnx FinFETs. The integration of alloying Sn content and applying external stress enhances the ballistic current due to carriers transferring from indirect L valleys with small injection velocity to direct Γ valley and other indirect L valleys with high injection velocity.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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